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- W2016211791 abstract "Structural characterization of the epitaxial thin aluminum nitride (AlN) 1-μm-thick films grown on SiC/(111)Si substrate by molecular beam epitaxy method was done. The films are shown to be single crystals of (0002) orientation with parameter full width half maximum FWHMωθ = 0.5°. A comparative study of the film electrical properties with the films grown by chloride vapor-phase epitaxy has revealed the difference in polar axis orientation, pyroelectric response, and piezoelectric hystograms." @default.
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- W2016211791 date "2015-03-12" @default.
- W2016211791 modified "2023-09-27" @default.
- W2016211791 title "SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate" @default.
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- W2016211791 doi "https://doi.org/10.1080/00150193.2015.1000144" @default.
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