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- W2016227852 abstract "A mushroom-gate structure for a high electron mobility transistor (HEMT) has been fabricated by a hybrid lithography process of focused ion beam (FIB) and shaped electron beam (EB). In this process, a resist in the gate region is reduced to about 0.2 μm by FIB lithography ("top gate" formation), and then the center of the top gate is exposed by the EB ("bottom gate" formation). Patterns of 0.20~0.25 pm were reproducibly delineated on the GaAs substrate by shaped EB. After recess etching and lift-off process, a 0.2 μm mushroom gate of HEMTs was obtained without substrate damage. The overlay accuracy for the FIB and EB exposure were both less than 0.2 μm." @default.
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- W2016227852 date "1989-08-01" @default.
- W2016227852 modified "2023-10-17" @default.
- W2016227852 title "GaAs FET Mushroom Gate Fabricated By FIB/EB Hybrid Lithography" @default.
- W2016227852 doi "https://doi.org/10.1117/12.968512" @default.
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