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- W2016233657 abstract "A newly designed In0.49Ga0.51P/AlxGa1−xAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure is theoretically analysed and investigated. By introducing a compositionally linear-graded AlGaAs layer into conventional InGaP/GaAs heterojunctions, a zero conduction-band discontinuity and a completely deleted potential spike can be obtained. Due to the suppression of potential spikes at the emitter/base junction, the studied device shows better dc performances such as a lower offset voltage (≤25 mV), lower saturation voltage (≤0.3 V), uniform current gain (~40) and lower turn-on voltage (~1.15 V). In addition, better ac performances are achieved. Consequently, the designed structure provides promise for high-performance analogue, digital and microwave device applications." @default.
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- W2016233657 date "2002-06-17" @default.
- W2016233657 modified "2023-09-26" @default.
- W2016233657 title "Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor with a continuous conduction-band structure" @default.
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- W2016233657 doi "https://doi.org/10.1088/0268-1242/17/7/312" @default.
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