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- W2016242018 abstract "Abstract Amorphous silicon may be transformed into crystalline silicon via a self-sustained process driven by the latent heat released upon crystallization. This is called explosive crystallization and is found to occur under rapid-heating conditions such as laser annealing. In this paper we compare different kinds of explosive crystallization, with emphasis on pulsed-laser induced explosive crystallization of ion-implanted amorphous silicon. It is shown that explosive crystallization of amorphous surface layers yields randomly oriented fine-grain polycrystalline silicon while explosive crystallization of amorphous layers buried beneath a crystalline top layer results in epitaxially aligned single-crystal silicon. The results are used to discuss ultra-rapid crystal nucleation and growth." @default.
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- W2016242018 date "1989-12-01" @default.
- W2016242018 modified "2023-09-27" @default.
- W2016242018 title "Explosive crystallization of amorphous silicon: triggering and propagation" @default.
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- W2016242018 doi "https://doi.org/10.1016/0169-4332(89)90201-8" @default.
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