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- W2016243742 abstract "The Ψ-MOSFET offers the most appropriate method for detailed electrical characterization of bare silicon on insulator (SOI) wafers. 2-D and 3-D numerical simulations of the Ψ-MOSFET are performed in order to validate the basic principles and to uncover several less obvious aspects: evaluation of the geometrical factor, distribution of the current lines, influence of the sample size and borders proximity. The optimal conditions for accurate operation of the Ψ-MOSFET are clarified in terms of sample dimensions, probe interdistance, film thickness and contact area." @default.
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- W2016243742 title "Numerical simulation of the pseudo-MOSFET characterization technique" @default.
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- W2016243742 doi "https://doi.org/10.1016/s0038-1101(98)00293-7" @default.
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