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- W2016259449 abstract "In this work, we investigate (i) the interaction of silicon interstitial atoms during thermal oxidation of silicon with a dislocation loop layer positioned at different distances from the surface as well as (ii) the interaction between two loop layers positioned at different depth distances. In both experiments, interstitials are injected by surface oxidation. The results show a linear dependence of the injection flux of interstitials with the inverse of the distance of the loop layer from the surface and a small leakage (16%) of the injected interstitials escaping from the upper and becoming bounded to the deeper loop layer. The experiments are performed using the wafer bonding technique that allows versatility on their design." @default.
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- W2016259449 date "2000-06-15" @default.
- W2016259449 modified "2023-10-09" @default.
- W2016259449 title "Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique" @default.
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- W2016259449 doi "https://doi.org/10.1063/1.373550" @default.
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