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- W2016259551 abstract "Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 18%, where electrical contact is achieved through relatively transparent regions in the oxide. This value is further enhanced to 31% by applying a dc current bias on the injector electrodes, which causes carrier drift away from the contact. A reverse bias reduces the ac spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements." @default.
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- W2016259551 date "2009-02-10" @default.
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- W2016259551 title "Controlling the efficiency of spin injection into graphene by carrier drift" @default.
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- W2016259551 doi "https://doi.org/10.1103/physrevb.79.081402" @default.
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