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• W2016265989 abstract "The physical properties of amorphous In–Ga–Zn–O (a-IGZO) films deposited by DC sputtering under various sputtering pressures were investigated. The sputtering pressure was found to influence various physical properties. Lower sputtering pressures resulted in film densification and decreased both surface roughness and hydrogen concentration. In addition, transistor performance characteristics such as saturation mobility and sub-threshold swing improved as the sputtering pressure decreased. These results yield insight into the correlation between thin film transistor (TFT) performance and deposition conditions." @default.
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• W2016265989 date "2013-03-01" @default.
• W2016265989 modified "2023-09-23" @default.
• W2016265989 title "Physical Properties of Amorphous In–Ga–Zn–O Films Deposited at Different Sputtering Pressures" @default.
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• W2016265989 doi "https://doi.org/10.7567/jjap.52.03ba01" @default.
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