Matches in SemOpenAlex for { <https://semopenalex.org/work/W2016284756> ?p ?o ?g. }
Showing items 1 to 83 of
83
with 100 items per page.
- W2016284756 endingPage "243" @default.
- W2016284756 startingPage "235" @default.
- W2016284756 abstract "Abstract The carrier transport and storage properties in the nitride of metal-nitride-oxide-semiconductor (MNOS) capacitors have been studied by combining repeated voltage ramp stress and constant voltage stress measurements. From the positive flat band voltage shift that results after bias application to the samples, it is clear that electrons dominate in the transport current and trapping. However, it is shown that, whereas at intermediate and low fields electrons are the single species involved in the capture-emission processes in the nitride, at higher electric fields a certain mechanism responsible for positive charge accumulation in the oxide-nitride interface region is also evident. By fitting theoretical results describing electron trapping in the nitride to the experimental flat band voltage shift dependence on bias, the density of electron traps in the nitride and the trapping efficiency have been estimated to be 3.7 × 1018 cm−3 and 10−2s cm2 respectively. We have also compared the experimental flat band voltage shift dependence on current obtained in constant current stressed MNOS capacitors with theoretical values derived from the fitted parameters. Quite good agreement has been found (except at low stress levels where leakage currents through the parallel resistance of the current source become significant), thus supporting the validity of the proposed model." @default.
- W2016284756 created "2016-06-24" @default.
- W2016284756 creator A5014782240 @default.
- W2016284756 creator A5040787826 @default.
- W2016284756 creator A5046174357 @default.
- W2016284756 creator A5089712120 @default.
- W2016284756 date "1992-06-01" @default.
- W2016284756 modified "2023-10-18" @default.
- W2016284756 title "Carrier transport and storage in Si3N4 for metal-nitride-oxide-semiconductor memory applications" @default.
- W2016284756 cites W1964593727 @default.
- W2016284756 cites W1967483020 @default.
- W2016284756 cites W1971307599 @default.
- W2016284756 cites W1987190523 @default.
- W2016284756 cites W1990292249 @default.
- W2016284756 cites W1993499538 @default.
- W2016284756 cites W2009035308 @default.
- W2016284756 cites W2022081271 @default.
- W2016284756 cites W2028841739 @default.
- W2016284756 cites W2038106172 @default.
- W2016284756 cites W2046713349 @default.
- W2016284756 cites W2059360035 @default.
- W2016284756 cites W2059753649 @default.
- W2016284756 cites W2065231231 @default.
- W2016284756 cites W2079138638 @default.
- W2016284756 cites W2085495649 @default.
- W2016284756 cites W2093084905 @default.
- W2016284756 cites W2094495831 @default.
- W2016284756 cites W2114705283 @default.
- W2016284756 cites W2121699455 @default.
- W2016284756 cites W2124750571 @default.
- W2016284756 cites W2132789743 @default.
- W2016284756 cites W2140641458 @default.
- W2016284756 cites W2151620032 @default.
- W2016284756 cites W2170526935 @default.
- W2016284756 doi "https://doi.org/10.1016/0040-6090(92)90288-m" @default.
- W2016284756 hasPublicationYear "1992" @default.
- W2016284756 type Work @default.
- W2016284756 sameAs 2016284756 @default.
- W2016284756 citedByCount "4" @default.
- W2016284756 crossrefType "journal-article" @default.
- W2016284756 hasAuthorship W2016284756A5014782240 @default.
- W2016284756 hasAuthorship W2016284756A5040787826 @default.
- W2016284756 hasAuthorship W2016284756A5046174357 @default.
- W2016284756 hasAuthorship W2016284756A5089712120 @default.
- W2016284756 hasConcept C108225325 @default.
- W2016284756 hasConcept C171250308 @default.
- W2016284756 hasConcept C191897082 @default.
- W2016284756 hasConcept C192562407 @default.
- W2016284756 hasConcept C194760766 @default.
- W2016284756 hasConcept C2779227376 @default.
- W2016284756 hasConcept C2779851234 @default.
- W2016284756 hasConcept C49040817 @default.
- W2016284756 hasConcept C544153396 @default.
- W2016284756 hasConceptScore W2016284756C108225325 @default.
- W2016284756 hasConceptScore W2016284756C171250308 @default.
- W2016284756 hasConceptScore W2016284756C191897082 @default.
- W2016284756 hasConceptScore W2016284756C192562407 @default.
- W2016284756 hasConceptScore W2016284756C194760766 @default.
- W2016284756 hasConceptScore W2016284756C2779227376 @default.
- W2016284756 hasConceptScore W2016284756C2779851234 @default.
- W2016284756 hasConceptScore W2016284756C49040817 @default.
- W2016284756 hasConceptScore W2016284756C544153396 @default.
- W2016284756 hasIssue "2" @default.
- W2016284756 hasLocation W20162847561 @default.
- W2016284756 hasOpenAccess W2016284756 @default.
- W2016284756 hasPrimaryLocation W20162847561 @default.
- W2016284756 hasRelatedWork W1570193773 @default.
- W2016284756 hasRelatedWork W2058676402 @default.
- W2016284756 hasRelatedWork W2066642406 @default.
- W2016284756 hasRelatedWork W2071798570 @default.
- W2016284756 hasRelatedWork W2134948224 @default.
- W2016284756 hasRelatedWork W2414885887 @default.
- W2016284756 hasRelatedWork W2737754697 @default.
- W2016284756 hasRelatedWork W2902546961 @default.
- W2016284756 hasRelatedWork W2924754280 @default.
- W2016284756 hasRelatedWork W2925336774 @default.
- W2016284756 hasVolume "213" @default.
- W2016284756 isParatext "false" @default.
- W2016284756 isRetracted "false" @default.
- W2016284756 magId "2016284756" @default.
- W2016284756 workType "article" @default.