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- W2016301709 abstract "With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices." @default.
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- W2016301709 date "2014-10-13" @default.
- W2016301709 modified "2023-10-16" @default.
- W2016301709 title "Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films" @default.
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- W2016301709 doi "https://doi.org/10.1063/1.4898601" @default.
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