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- W2016313008 abstract "A novel high voltage LDMOS with multiple step shaped equipotential rings (MSSER-LDMOS) to compensate the influence of a high voltage interconnection (HVI) is proposed, and its shielding model is explained and proved by 2D device simulation. The influences on the breakdown voltage (BV) of MSSER-LDMOS have been discussed in detailed, including the P-top dose, spacing between the adjacent equipotential rings and field oxide charge in the drift region. The simulation results indicate that the breakdown voltage of MSSER-LDMOS can reach 11.7 V/μm. It is increased by 156% in comparison to conventional LDMOS with HVI." @default.
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- W2016313008 date "2007-03-01" @default.
- W2016313008 modified "2023-10-16" @default.
- W2016313008 title "A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings" @default.
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- W2016313008 doi "https://doi.org/10.1016/j.sse.2007.02.027" @default.
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