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• W2016319112 abstract "p -type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3Ωcm with a Hall mobility of 0.43cm2∕Vs and carrier concentration of 2.25×1017cm−3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region." @default.
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• W2016319112 date "2004-10-11" @default.
• W2016319112 modified "2023-10-16" @default.
• W2016319112 title "p -type conduction in N–Al co-doped ZnO thin films" @default.
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• W2016319112 doi "https://doi.org/10.1063/1.1803935" @default.
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