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• W2016332674 abstract "Abstract The electrical conductivity and departure from the stoichiometry of Nd 2 O 3 have been measured over the temperature range of 900° to 1100°C and oxygen partial pressure of 1 to 10 −16 atm. The hole conductivity of Nd 2 O 3 is found to be proportional to P 1 n O 2 , where n are 4.6, 4.9, and 5.1 at 900°, 1000°, and 1100°C, respectively. From the oxygen partial pressure dependence of the hole conductivity, it is shown that the predominant point defects in nonstoichiometric NdO 1·+ x are fully ionized and partially doubly ionized metal vacancies. From the thermogravimetric measurements, the departure from stoichiometry, x in NdO 1·5+ x , is 2.0 × 10 −3 at 1000°C and 1 atm. By combining the electrical conductivity and weight change data, it is shown that the hole mobility is 6.3 × 10 −4 (cm 2 /V·sec) at 1000°C and 1 atm." @default.
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• W2016332674 date "1974-06-01" @default.
• W2016332674 modified "2023-09-27" @default.
• W2016332674 title "Electrical conductivity and defect structure of Nd2O3+x" @default.
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• W2016332674 doi "https://doi.org/10.1016/0022-4596(74)90015-2" @default.
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