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- W2016335507 abstract "Cu(In,Ga) (S,Se)2 thin films were fabricated by sequential evaporation from CuGaSe2, CuInSe2 and In2S3 compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In2S3]/([CuGaSe2] + [CuInSe2]) mole ratio in the evaporating materials increased, the S/(S + Se) atomic ratio in the thin films increased from 0 to 0.16 determined by XRF and to 0.43 by EPMA. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga) (S,Se)2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that Cu(In,Ga) (S,Se)2 thin films had large and columnar grains. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2016335507 date "2006-09-01" @default.
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- W2016335507 title "Characterization of Cu(In,Ga) (S,Se)2thin films prepared by sequential evaporation from ternary compounds" @default.
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- W2016335507 doi "https://doi.org/10.1002/pssa.200669551" @default.
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