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- W2016346128 abstract "pn-Junctions of MEH-PPV on top of heavily doped n-type silicon were used in electrical measurements. Through deep-level transient-spectroscopy (DLTS)-like measurements, four traps (two majority and two minority traps) could be identified on top of the shallow acceptor level responsible for conduction. Furthermore, evidence is found for interface states." @default.
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- W2016346128 date "2000-06-01" @default.
- W2016346128 modified "2023-10-16" @default.
- W2016346128 title "Electronic levels in MEH-PPV" @default.
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- W2016346128 doi "https://doi.org/10.1016/s0379-6779(99)00413-0" @default.
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