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• W2016346427 abstract "Different ZnSe/GaAs epilayers prepared by low-pressure metal organic vapour-phase epitaxy under the conditions given by Nurmikko and Gunshor (1993 Physica B 185 16) are studied through their low-temperature transmission, reflection and photoluminescence spectra. Several samples are etched out from their GaAs substrate and the properties of as-grown surfaces and etched surfaces are compared. The etched samples seem to be free of in-plane strain and to behave like bulk ZnSe. The free-exciton excited state (n=2) is clearly observed in transmission, reflection and luminescence spectra. We also studied the thermal quenching of the photoluminescence in order to confirm the origin of some bound-exciton centres." @default.
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• W2016346427 date "1994-11-02" @default.
• W2016346427 modified "2023-09-25" @default.
• W2016346427 title "Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy" @default.
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• W2016346427 doi "https://doi.org/10.1088/0268-1242/9/11/007" @default.
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