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• W2016347144 abstract "The effect of additional HCl flow on the growth of a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy was investigated. Upon increasing the additional HCl flow rate, the surface roughness of the a-plane GaN layers, as measured by atomic force microscopy, reduced. The crystal quality of a-plane GaN, however, deteriorated, as confirmed by high stacking fault density observed by transmission electron microscopy, relating to the increased nuclei density and mosaicity and a high full width at half maximum in the ω-scan X-ray rocking curve. These observations were attributed to the large difference of growth rate and etch rate along c-direction, and m-direction of a-plane GaN, which were originated from the surface energetics of the crystallographic planes of GaN." @default.
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• W2016347144 date "2014-10-01" @default.
• W2016347144 modified "2023-09-27" @default.
• W2016347144 title "Effect of additional hydrochloric acid flow on the growth of non-polar a-plane GaN layers on r-plane sapphire by hydride vapor-phase epitaxy" @default.
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• W2016347144 doi "https://doi.org/10.1016/j.jcrysgro.2014.07.002" @default.
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