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- W2016359075 abstract "We demonstrated an ambipolar-type organic field-effect transistor (OFET) in a dual-gate configuration where two different layers of unipolar organic semiconductors (OSC) are stacked. In our OFET, the hole-channel for the p-type operation depends primarily on the corresponding gate insulator-OSC interface and the electron-channel for the n-type operation on the remaining interface in an independent manner. Using a combination of two independent gate voltages, the charge transport can be efficiently controlled and the on-off current ratio becomes enhanced in a dual-gate configuration. The optimization of the materials, the interfaces, and the device architectures will lead to a wide range of organic electronic applications." @default.
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- W2016359075 date "2014-07-03" @default.
- W2016359075 modified "2023-10-18" @default.
- W2016359075 title "Ambipolar-Type Organic Field-Effect Transistor with Two Stacked Active Layers in Dual-Gate Configuration" @default.
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- W2016359075 doi "https://doi.org/10.1080/15421406.2014.931773" @default.
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