Matches in SemOpenAlex for { <https://semopenalex.org/work/W2016363804> ?p ?o ?g. }
- W2016363804 abstract "Gallium nitride (GaN) is a widely used semiconductor for high frequency and high power devices due to of its unique electrical properties: a wide band gap, high breakdown field, and high electron mobility. However, thermal management has become a limiting factor regarding efficiency, lifetime, and advancement of GaN devices and GaN-based applications. In this work, we study the thermal conductivity of beta-phase gallium oxide (β-Ga2O3) thin films, a component of typical gate oxides used in such devices. We use time domain thermoreflectance to measure the thermal conductivity of a variety of polycrystalline β-Ga2O3 films of different thicknesses grown via open atmosphere annealing of the surfaces of GaN films on sapphire substrates. We show that the measured effective thermal conductivity of these β-Ga2O3 films can span 1.5 orders of magnitude, increasing with an increased film thickness, which is indicative of the relatively large intrinsic thermal conductivity of the β-Ga2O3 grown via this technique (8.8 ± 3.4 W m−1 K−1) and large mean free paths compared to typical gate dielectrics commonly used in GaN device contacts. By conducting time domain thermoreflectance (TDTR) measurements with different metal transducers (Al, Au, and Au with a Ti wetting layer), we attribute this variation in effective thermal conductivity to a combination of size effects in the β-Ga2O3 film resulting from phonon scattering at the β-Ga2O3/GaN interface and thermal transport across the β-Ga2O3/GaN interface. The measured thermal properties of open atmosphere-grown β-Ga2O3 and its interface with GaN set the stage for thermal engineering of gate contacts in high frequency GaN-based devices." @default.
- W2016363804 created "2016-06-24" @default.
- W2016363804 creator A5025421805 @default.
- W2016363804 creator A5033946101 @default.
- W2016363804 creator A5035301004 @default.
- W2016363804 creator A5047045311 @default.
- W2016363804 creator A5058842255 @default.
- W2016363804 creator A5066311226 @default.
- W2016363804 creator A5077021013 @default.
- W2016363804 date "2015-02-25" @default.
- W2016363804 modified "2023-09-24" @default.
- W2016363804 title "Size effects in the thermal conductivity of gallium oxide (<i>β</i>-Ga2O3) films grown via open-atmosphere annealing of gallium nitride" @default.
- W2016363804 cites W1497016567 @default.
- W2016363804 cites W1626335948 @default.
- W2016363804 cites W1647014657 @default.
- W2016363804 cites W1654053096 @default.
- W2016363804 cites W1673695041 @default.
- W2016363804 cites W1840781947 @default.
- W2016363804 cites W1897362309 @default.
- W2016363804 cites W1966978795 @default.
- W2016363804 cites W1969808188 @default.
- W2016363804 cites W1972609815 @default.
- W2016363804 cites W1975372685 @default.
- W2016363804 cites W1975492637 @default.
- W2016363804 cites W1976431068 @default.
- W2016363804 cites W1978546310 @default.
- W2016363804 cites W1980367394 @default.
- W2016363804 cites W1981867445 @default.
- W2016363804 cites W1981901115 @default.
- W2016363804 cites W1999128555 @default.
- W2016363804 cites W2000428197 @default.
- W2016363804 cites W2004560856 @default.
- W2016363804 cites W2009250241 @default.
- W2016363804 cites W2009590881 @default.
- W2016363804 cites W2011159000 @default.
- W2016363804 cites W2013876841 @default.
- W2016363804 cites W2017410060 @default.
- W2016363804 cites W2019297315 @default.
- W2016363804 cites W2025194570 @default.
- W2016363804 cites W2028685996 @default.
- W2016363804 cites W2031036190 @default.
- W2016363804 cites W2031217702 @default.
- W2016363804 cites W2032695760 @default.
- W2016363804 cites W2041235869 @default.
- W2016363804 cites W2041806780 @default.
- W2016363804 cites W2042108567 @default.
- W2016363804 cites W2044862122 @default.
- W2016363804 cites W2050622734 @default.
- W2016363804 cites W2050723344 @default.
- W2016363804 cites W2055143965 @default.
- W2016363804 cites W2073676279 @default.
- W2016363804 cites W2077952780 @default.
- W2016363804 cites W2079510098 @default.
- W2016363804 cites W2083424710 @default.
- W2016363804 cites W2086662549 @default.
- W2016363804 cites W2086778233 @default.
- W2016363804 cites W2092369133 @default.
- W2016363804 cites W2092539809 @default.
- W2016363804 cites W2097424218 @default.
- W2016363804 cites W2099830854 @default.
- W2016363804 cites W2114895010 @default.
- W2016363804 cites W2166475097 @default.
- W2016363804 cites W2312393705 @default.
- W2016363804 cites W3101746025 @default.
- W2016363804 cites W66743074 @default.
- W2016363804 doi "https://doi.org/10.1063/1.4913601" @default.
- W2016363804 hasPublicationYear "2015" @default.
- W2016363804 type Work @default.
- W2016363804 sameAs 2016363804 @default.
- W2016363804 citedByCount "39" @default.
- W2016363804 countsByYear W20163638042015 @default.
- W2016363804 countsByYear W20163638042016 @default.
- W2016363804 countsByYear W20163638042017 @default.
- W2016363804 countsByYear W20163638042018 @default.
- W2016363804 countsByYear W20163638042019 @default.
- W2016363804 countsByYear W20163638042020 @default.
- W2016363804 countsByYear W20163638042021 @default.
- W2016363804 countsByYear W20163638042022 @default.
- W2016363804 countsByYear W20163638042023 @default.
- W2016363804 crossrefType "journal-article" @default.
- W2016363804 hasAuthorship W2016363804A5025421805 @default.
- W2016363804 hasAuthorship W2016363804A5033946101 @default.
- W2016363804 hasAuthorship W2016363804A5035301004 @default.
- W2016363804 hasAuthorship W2016363804A5047045311 @default.
- W2016363804 hasAuthorship W2016363804A5058842255 @default.
- W2016363804 hasAuthorship W2016363804A5066311226 @default.
- W2016363804 hasAuthorship W2016363804A5077021013 @default.
- W2016363804 hasConcept C106782819 @default.
- W2016363804 hasConcept C159985019 @default.
- W2016363804 hasConcept C189278905 @default.
- W2016363804 hasConcept C191897082 @default.
- W2016363804 hasConcept C192562407 @default.
- W2016363804 hasConcept C194760766 @default.
- W2016363804 hasConcept C2777855556 @default.
- W2016363804 hasConcept C2778871202 @default.
- W2016363804 hasConcept C2779227376 @default.
- W2016363804 hasConcept C49040817 @default.
- W2016363804 hasConcept C550372918 @default.
- W2016363804 hasConcept C97346530 @default.
- W2016363804 hasConceptScore W2016363804C106782819 @default.