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• W2016399117 abstract "In this work, the impact of ammonium sulfide ((NH4)2S) surface treatment on the electrical passivation of the Al2O3/p-GaSb interface is studied for varying sulfide concentrations. Prior to atomic layer deposition of Al2O3, GaSb surfaces were treated in 1%, 5%, 10%, and 22% (NH4)2S solutions for 10 min at 295 K. The smallest stretch-out and flatband voltage shifts coupled with the largest capacitance swing, as indicated by capacitance-voltage (CV) measurements, were obtained for the 1% treatment. The resulting interface defect trap density (Dit) distribution showed a minimum value of 4 × 1012 cm−2eV−1 at Ev + 0.27 eV. Transmission electron microscopy and atomic force microscopy examination revealed the formation of interfacial layers and increased roughness at the Al2O3/p-GaSb interface of samples treated with 10% and 22% (NH4)2S. In combination, these effects degrade the interface quality as reflected in the CV characteristics." @default.
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• W2016399117 date "2014-10-20" @default.
• W2016399117 modified "2023-10-09" @default.
• W2016399117 title "Electrical and physical characterization of the Al2O3/<i>p</i>-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments" @default.
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• W2016399117 doi "https://doi.org/10.1063/1.4899123" @default.
• W2016399117 hasPublicationYear "2014" @default.
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