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- W2016408850 abstract "Summary: An interesting opportunity arises when two or more oxides are used as alloys in an attempt to combine the desirable properties of several materials. These systems are predominantly non-stoichiometric, and in the case of two oxides, they are called pseudobinary alloys. Varying the ratio of the two oxides, thin films with certain preset characteristics can be obtained—refractive index, energy band gap, dielectric constants etc. Our investigations were focussed on spin-coated (Al2O3)x(TiO2)1 − x films. The electrical properties of (Al2O3)x(TiO2)1 − x were studied forming MIS structures. For accurate determinations of the dielectric constant various measurement methods were used: classical C-V, impedance spectroscopy and CV map B instrument. The effect of adding Al2O3 to TiO2 is to produce an amorphous dielectric film, which is thermodynamically stable on Si. C-V curves at 1 MHz of MIS structures with PBA (Al2O3)x(TiO2)1 − x and ALD Al2O3 film." @default.
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- W2016408850 date "2006-02-17" @default.
- W2016408850 modified "2023-10-18" @default.
- W2016408850 title "Application of Pseudobinary Alloys (Al2O3)x(TiO2)1 −x as High-k Dielectrics on Silicon" @default.
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- W2016408850 doi "https://doi.org/10.1002/ppap.200500078" @default.
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