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- W2016450103 abstract "Abstract Bulk Ga 1 − x In x As single crystals with In composition ranging from x = 0.02 to 0.1 have been grown by the LEC method from melt compositions of 26.3 to 55 mol% In. Due to segregation effects, the In content in the melt increases during growth. Crystals grown from different initial melt compositions exhibited cellular structure followed by polycrystallinity when the melt composition had reached a unique critical value of In concentration for a particular set of growth conditions. The point at which cellular structure occurs has been evaluated for a variety of growth parameters. These parameters include initial melt compositions, thermal gradients in the melt, crystal rotation and pull speed. Applying the knowledge of the conditions for the onset of cellular structure has maximized the successful growth of single-crystal ternary material and has been instrumental in increasing indium content. The AB and KOH etches were used to highlight growth striations, view onset of cellular structure and examine dislocation density. The In composition in the crystal was determined by low-temperature PL, X-ray lattice parameter measurement, absorption edge position and WDX." @default.
- W2016450103 created "2016-06-24" @default.
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- W2016450103 date "1997-04-01" @default.
- W2016450103 modified "2023-09-25" @default.
- W2016450103 title "Cellular structure in LEC ternary Ga1 − xInxAs crystals" @default.
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- W2016450103 doi "https://doi.org/10.1016/s0022-0248(96)01113-x" @default.
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