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- W2016457112 abstract "Continuing the discussion of experimental results of photosensitive field emission from p-type semiconductor cathodes [6], a problem of electron emission in a one-dimensional metal–insulator-semiconductor structure is considered. Introducing the electron lifetime in the inversion layer with respect to emission (τe) and the accumulation time of the inversion layer (τIL), the emission light–current–voltage characteristics in the inversion layer approximation are obtained from which the condition of photosensitive emission (τe ≪ τIL) follows. The discussion of the second photosensitivity condition (absence of the avalanche generation) shows that for semiconductors with a large electron affinity and a small gap width photosensitive emission without avalanche breakdown is possible with surface states of the density > 1013 cm−2 involved which are in field exchange with the valence band. [Russian Text Ignored.]" @default.
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- W2016457112 title "On a model of photo-field-emission from p-type semiconductors" @default.
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- W2016457112 doi "https://doi.org/10.1002/pssa.19700010218" @default.
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