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• W2016460472 abstract "The density of radiation‐induced interface traps in a metal‐oxide‐semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate‐induced interfacial stress distribution in the MOS system. The gate‐induced bond strain gradient model that we proposed previously may be readily used to explain the results." @default.
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• W2016460472 date "1985-07-01" @default.
• W2016460472 modified "2023-09-25" @default.
• W2016460472 title "Dependence of radiation‐induced interface traps on gate electrode material in metal/SiO₂/Si devices" @default.
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• W2016460472 doi "https://doi.org/10.1063/1.96402" @default.
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