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- W2016472221 abstract "We have demonstrated that carrier mobility and buffer leakage in MBE-grown AlGaN/GaN high electron mobility transistor structures grown on SiC depend sensitively on the Al/N flux ratio during the growth of the AlN nucleation layer (NL). In particular, as the Al/N flux ratio increases from slightly below to slightly above unity, the Hall mobility increases from 1050 cm2/V·s to 1450 cm2/V·s and the buffer leakage increases by three orders of magnitude. Observations by transmission electron microscopy indicate that in structures in which the AlN nucleation layer growth was Al-rich the AlN and GaN layers contain stacking faults, the interface between them is rough, and the near-interface region of the nominally wurtzite-GaN buffer contains regions of cubic material. By contrast, structures in which the AlN NL was grown Al-lean show sharp interfaces between the AlN and GaN layers, and neither stacking faults nor cubic material were observed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2016472221 date "2005-04-11" @default.
- W2016472221 modified "2023-09-26" @default.
- W2016472221 title "Correlation of electronic and structural properties of MBE-grown AlGaN/GaN heterostructures to Al/N flux ratio during nucleation layer growth" @default.
- W2016472221 doi "https://doi.org/10.1002/pssc.200461432" @default.
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