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- W2016491085 abstract "A detailed study has been made of the surface state of (100) orientated epitaxial layers of indium phosphide produced by the closed-tube-vapour-transport growth process. Particular attention has been paid to investigating the composition and chemical state of the first few atomic layers of the semiconductor surface. A well defined oxidation state has been found to be present. This also results in a surface that is heavily depleted of phosphorus and which is rich in indium. The study has been performed with Auger spectroscopy and Auger profiling. A fine structure was found to be present in the low energy Auger spectra obtained from these surfaces. The most consistent interpretation of this structure is in terms of cross-transitions originating from In-O and P-O complexes resident upon the semiconductor surface." @default.
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- W2016491085 date "1981-03-14" @default.
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- W2016491085 title "The chemical state of the surfaces of (100) orientated epitaxial layers of indium phosphide produced by the closed-tube-vapour-deposition growth process" @default.
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- W2016491085 doi "https://doi.org/10.1088/0022-3727/14/3/018" @default.
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