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- W2016518858 abstract "In this paper, we demonstrate that p-type InN nanowires can be realized by direct magnesium (Mg) doping. X-ray photoelectron spectroscopy experiments on the sidewalls of Mg-doped InN nanowires indicate no surface electron accumulation with the background electron concentration below 1×10<sup>16</sup> cm<sup>-3</sup>. The presence of Mg-acceptors is clearly observed by the low-temperature photoluminescence (PL) spectroscopy, which shows a band-to-band recombination PL peak and a Mg-acceptor energy level related PL peak. The peak energy separation is about 60 meV, which is consistent with the Mg activation energy in InN. Single nanowire field-effect transistors are further fabricated and investigated, which clearly exhibits a p-type transistor behavior, representing the first direct evidence for p-type conduction in any InN structures. The potential device applications based on InN nanowires are also discussed." @default.
- W2016518858 created "2016-06-24" @default.
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- W2016518858 date "2014-03-08" @default.
- W2016518858 modified "2023-09-23" @default.
- W2016518858 title "p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics" @default.
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- W2016518858 doi "https://doi.org/10.1117/12.2040847" @default.
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