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• W2016564572 abstract "Elevated temperature scanning tunneling microscopy measurements have shown that one key phase during gas-source homoepitaxy of Si(001) is the formation of clean Si ad-dimers from hydrogenated ad-dimers, though the mechanism for this formation is unknown. We present ab initio density functional calculations designed to explore this mechanism. The calculations show that there is a pathway consistent with the experimentally observed reaction rates, which proceeds via a metastable intermediate state, and is effectively irreversible. This result fills a vital gap in our understanding of the atomic-scale details of gas-source growth of Si(001)." @default.
• W2016564572 created "2016-06-24" @default.
• W2016564572 creator A5065566601 @default.
• W2016564572 date "2003-03-31" @default.
• W2016564572 modified "2023-09-27" @default.
• W2016564572 title "Formation of clean dimers during gas-source growth of Si(001)" @default.
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• W2016564572 doi "https://doi.org/10.1103/physrevb.67.115341" @default.
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