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- W2016567462 abstract "In this work, the effect of various externally applied strains on the electrical conductivity of Si/Si1−xGex nanocomposite thin films is studied. A degenerate two-band k ⋅ p theory is utilized to calculate the variation of the electronic band structure in the semiconductor nanocomposite thin films as a function of externally applied strains. The strain-dependent electrical conductivity of the material is computed by using a two dimensional real-space Non-Equilibrium Green’s Function (NEGF) self-consistently coupled with the Poisson equation. In the analysis, [1 0 0] uniaxial, [1 0 0]/[0 0 1] and [1 0 0]/[0 1 0] biaxial strains are considered for the through-thickness electron transport in [1 0 0] direction. Numerical results demonstrate that the external strains have a significant influence on the electrical conductivity of the nanocomposite thin films. We show that the electrical conductivity variation can be attributed to combined effects of strain-induced splitting of the conduction band edges and change in band offset, electron quantum confinement, and size of the inclusion material in the thin films." @default.
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- W2016567462 date "2013-07-01" @default.
- W2016567462 modified "2023-10-02" @default.
- W2016567462 title "Strain effect analysis on the electrical conductivity of Si/Si1−xGex nanocomposite thin films" @default.
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- W2016567462 doi "https://doi.org/10.1016/j.sse.2013.03.009" @default.
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