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• W2016570111 abstract "We have studied nitrified copper (CuNx) thin films grown by reactive sputtering in the context of spintronic devices. The Ar-to-N2 flow ratio enables tunability of the electrical resistivity and surface roughness of the CuNx films, with the former increasing to nearly 20 times that of Cu, and the latter reduced to the atomic scale. Incorporating this into a Ta/CuNx/Ta seed stack for spin valves improves the current-in-plane (CIP) magnetoresistance; maximum magnetoresistance results with CuNx seed layer and Cu interlayer. Finally, finite element modeling results are presented that suggest the use of CuNx in nanocontact spin torque oscillators can enhance current densities by limiting the current spread through the device. This may positively impact threshold currents, power requirements, and device reliability." @default.
• W2016570111 created "2016-06-24" @default.
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• W2016570111 date "2012-04-01" @default.
• W2016570111 modified "2023-10-01" @default.
• W2016570111 title "Utility of reactively sputtered CuN_<i>x</i> films in spintronics devices" @default.
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• W2016570111 doi "https://doi.org/10.1063/1.3703067" @default.
• W2016570111 hasPublicationYear "2012" @default.
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