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• W2016601997 endingPage "1602" @default.
• W2016601997 startingPage "1593" @default.
• W2016601997 abstract "Blanket films of ultralow dielectric constant (ULK) materials and 193nm photoresist films have been processed downstream from hydrogen and deuterium-based discharges produced using an inductively coupled plasma reactor. Photoresist ashing rates and ULK modifications have been determined as a function of process parameters. The explored ULK materials differed widely in porosity and carbon content. The effect of processing time, substrate temperature (200–300°C), and gas composition on the surface and bulk chemical composition of ULK materials was monitored and quantified by ex situ ellipsometry and time-of-flight secondary ion mass spectrometry (SIMS). The stripping rates of 193nm photoresist films were found to strongly depend on processing temperature and only weakly on the nature of the H2/additive gas mixture. The authors found that hydrogen (or deuterium) fully penetrates the high porosity ULK layer, whereas for low porosity materials, such penetration is limited to a 50nm near-surface region. SIMS measurements also reveal that H2 (D2) diffusion into carbon-rich ULK layers can cause substantial carbon depletion throughout the penetration region. ULK damage values increase with temperature and injection of gas additives such as argon, helium, and nitrogen to H2 or D2 process gases. For each ULK material, the amount of damage depends on the gas mixing ratio; in general, high percentages of nitrogen in H2∕N2 (or D2∕N2) mixtures cause the most damage. Overall, the results demonstrate that ULK ashing damage depends strongly on both ULK material properties and H2-based plasma process parameters. In addition, the authors observed in this work a kinetic isotope effect for stripping of 193nm photoresist films in H2∕D2∕N2-based discharges. For given ashing process conditions, the photoresist ashing rate decreases by a factor of 1.414 (or square root of 2) in D2 plasma compared to H2 plasma. This can be explained by the influence of the H or D mass on the chemical reaction rate through a change in the frequency of nuclear vibrations of the reacting atoms. The presence of the kinetic isotope effect for gas mixtures provides unambiguous evidence of the rate-limiting role of atomic hydrogen in the fundamental etching reaction. Simultaneously processed ULK materials showed minor film thickness changes (&lt;10nm) in H2 or D2 discharges, and the ULK damage level does not reflect a kinetic isotope effect. Therefore the H∕D isotope effect can be used to separate H2∕D2 associated ashing and etching processes from other chemistries or mechanisms." @default.
• W2016601997 created "2016-06-24" @default.
• W2016601997 creator A5013488791 @default.
• W2016601997 creator A5054905586 @default.
• W2016601997 creator A5062189858 @default.
• W2016601997 creator A5075871574 @default.
• W2016601997 creator A5079814380 @default.
• W2016601997 creator A5088251109 @default.
• W2016601997 creator A5091413212 @default.
• W2016601997 date "2007-08-17" @default.
• W2016601997 modified "2023-09-27" @default.
• W2016601997 title "On the photoresist stripping and damage of ultralow k dielectric materials using remote H[sub 2]- and D[sub 2]-based discharges" @default.
• W2016601997 cites W1542423682 @default.
• W2016601997 cites W1610753954 @default.
• W2016601997 cites W1649630183 @default.
• W2016601997 cites W1675695310 @default.
• W2016601997 cites W177470936 @default.
• W2016601997 cites W1965969235 @default.
• W2016601997 cites W1968501422 @default.
• W2016601997 cites W1980443743 @default.
• W2016601997 cites W2001990317 @default.
• W2016601997 cites W2005835122 @default.
• W2016601997 cites W2007157210 @default.
• W2016601997 cites W2017116340 @default.
• W2016601997 cites W2019397189 @default.
• W2016601997 cites W2028860343 @default.
• W2016601997 cites W2044399817 @default.
• W2016601997 cites W2044769302 @default.
• W2016601997 cites W2048646273 @default.
• W2016601997 cites W2050685621 @default.
• W2016601997 cites W2053117344 @default.
• W2016601997 cites W2053206578 @default.
• W2016601997 cites W2066519941 @default.
• W2016601997 cites W2095038836 @default.
• W2016601997 cites W2105631635 @default.
• W2016601997 doi "https://doi.org/10.1116/1.2769360" @default.
• W2016601997 hasPublicationYear "2007" @default.
• W2016601997 type Work @default.
• W2016601997 sameAs 2016601997 @default.
• W2016601997 citedByCount "13" @default.
• W2016601997 countsByYear W20166019972012 @default.
• W2016601997 countsByYear W20166019972013 @default.
• W2016601997 countsByYear W20166019972014 @default.
• W2016601997 crossrefType "journal-article" @default.
• W2016601997 hasAuthorship W2016601997A5013488791 @default.
• W2016601997 hasAuthorship W2016601997A5054905586 @default.
• W2016601997 hasAuthorship W2016601997A5062189858 @default.
• W2016601997 hasAuthorship W2016601997A5075871574 @default.
• W2016601997 hasAuthorship W2016601997A5079814380 @default.
• W2016601997 hasAuthorship W2016601997A5088251109 @default.
• W2016601997 hasAuthorship W2016601997A5091413212 @default.
• W2016601997 hasConcept C113196181 @default.
• W2016601997 hasConcept C120665830 @default.
• W2016601997 hasConcept C121332964 @default.
• W2016601997 hasConcept C133386390 @default.
• W2016601997 hasConcept C134406635 @default.
• W2016601997 hasConcept C159985019 @default.
• W2016601997 hasConcept C178790620 @default.
• W2016601997 hasConcept C185592680 @default.
• W2016601997 hasConcept C192562407 @default.
• W2016601997 hasConcept C193493375 @default.
• W2016601997 hasConcept C2779227376 @default.
• W2016601997 hasConcept C43617362 @default.
• W2016601997 hasConcept C49040817 @default.
• W2016601997 hasConcept C512968161 @default.
• W2016601997 hasConcept C547737533 @default.
• W2016601997 hasConcept C62520636 @default.
• W2016601997 hasConcept C6648577 @default.
• W2016601997 hasConcept C99293441 @default.
• W2016601997 hasConceptScore W2016601997C113196181 @default.
• W2016601997 hasConceptScore W2016601997C120665830 @default.
• W2016601997 hasConceptScore W2016601997C121332964 @default.
• W2016601997 hasConceptScore W2016601997C133386390 @default.
• W2016601997 hasConceptScore W2016601997C134406635 @default.
• W2016601997 hasConceptScore W2016601997C159985019 @default.
• W2016601997 hasConceptScore W2016601997C178790620 @default.
• W2016601997 hasConceptScore W2016601997C185592680 @default.
• W2016601997 hasConceptScore W2016601997C192562407 @default.
• W2016601997 hasConceptScore W2016601997C193493375 @default.
• W2016601997 hasConceptScore W2016601997C2779227376 @default.
• W2016601997 hasConceptScore W2016601997C43617362 @default.
• W2016601997 hasConceptScore W2016601997C49040817 @default.
• W2016601997 hasConceptScore W2016601997C512968161 @default.
• W2016601997 hasConceptScore W2016601997C547737533 @default.
• W2016601997 hasConceptScore W2016601997C62520636 @default.
• W2016601997 hasConceptScore W2016601997C6648577 @default.
• W2016601997 hasConceptScore W2016601997C99293441 @default.
• W2016601997 hasIssue "5" @default.
• W2016601997 hasLocation W20166019971 @default.
• W2016601997 hasOpenAccess W2016601997 @default.
• W2016601997 hasPrimaryLocation W20166019971 @default.
• W2016601997 hasRelatedWork W1992257316 @default.
• W2016601997 hasRelatedWork W1994753809 @default.
• W2016601997 hasRelatedWork W2021714583 @default.
• W2016601997 hasRelatedWork W2043673973 @default.
• W2016601997 hasRelatedWork W2075580692 @default.
• W2016601997 hasRelatedWork W2140905454 @default.
• W2016601997 hasRelatedWork W2383379936 @default.

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