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• W2016603266 abstract "Distributed Bragg reflectors based on AlxGa1−xN/GaN multilayer stacks have been grown by plasma-assisted molecular-beam epitaxy on GaN templates. The nominal Al composition ranged from 30% to 45%, and the layer thicknesses of the ten-period stack were designed for a target wavelength of 510 nm. Transmission electron microscopy data reveal periodic structures where (Al,Ga)N on the GaN interface is sharper than GaN on the (Al,Ga)N one. X-ray diffraction spectra fitted to a dynamic diffraction simulation model yield an estimate of the layer thicknesses, Al%, and lattice strain. Reflectivity values above 50% at 510 nm have been reproducibly achieved, in very good agreement with the results of the matrix-method simulation." @default.
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• W2016603266 date "2001-10-01" @default.
• W2016603266 modified "2023-10-17" @default.
• W2016603266 title "High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy" @default.
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• W2016603266 doi "https://doi.org/10.1063/1.1401090" @default.
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