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- W2016622153 abstract "A system Pd (deposit)-Si (substrate) has been studied by LEED and AES. Pd2Si formed on Si(111) became epitaxial after a short time of annealing at a temperature between 300 and 700°C, while the Pd2Si formed on Si(100) did not, in both cases the surfaces of the Pd2Si being covered with a very thin Si layer. A sequence of superstructures (3√3 × 3√3), (1 × 1), and (2√3 × 2√3) was observed successively in Pd/Si(111) as the annealing temperature was increased. A (√3 × √3) structure was obtained by sputtering the 3√3 surface slightly. It was found that the √3 structure corresponds to Pd2Si(0001)-(1 × 1) grown epitaxially on Si(111), and that the 3√3 structure comes from the thin Si layer accumulated over the silicide surface, while the 2√3 and 1 structures arise from a submonolayer of Pd adsorbed on Si(111). Superstructures observed on a Pd/Si(100) system are also studied." @default.
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- W2016622153 date "1980-07-01" @default.
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- W2016622153 title "A leed-aes study of thin Pd films on Si(111) and (100) substrates" @default.
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- W2016622153 doi "https://doi.org/10.1016/0039-6028(80)90105-3" @default.
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