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• W2016632923 abstract "Abstract Multiple-tunnel junction devices with a source–drain electrode separation ranging from 50 to 200 nm and non-linear source–drain current–voltage characteristics, are constructed by a combination of optical lithography, anisotropic wet and dry etching and low-energy Si ion implantation. Electrical characteristics are found to depend strongly on the Si implantation dose and source–drain separation." @default.
• W2016632923 created "2016-06-24" @default.
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• W2016632923 date "2001-09-01" @default.
• W2016632923 modified "2023-10-01" @default.
• W2016632923 title "Silicon-nanocrystal-based multiple-tunnel junction devices obtained by a combination of V-groove and ion beam synthesis techniques" @default.
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• W2016632923 doi "https://doi.org/10.1016/s0167-9317(01)00432-4" @default.
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