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• W2016639208 abstract "Fe/C multilayers have been deposited by rf sputtering on two silicon substrates with a significant difference in surface quality. Scanning tunneling microscopy (STM) shows a roughness replication process: the smoother the substrate, the smoother the final surface. Both samples present a Gaussian height distribution. The fractal analysis of the STM data shows that, for dimensions larger than the grain size, the surface can be described as a self-affine fractal with a fractal dimension of 2.6±0.1, which agrees with the prediction of ballistic deposition models without restructuring. For dimensions lower than the grain size, the fractal dimension is close to the Euclidean value 2." @default.
• W2016639208 created "2016-06-24" @default.
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• W2016639208 date "1994-01-01" @default.
• W2016639208 modified "2023-09-25" @default.
• W2016639208 title "Scanning tunneling microscopy characterization of the morphology of Fe/C multilayers grown on silicon substrates" @default.
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• W2016639208 doi "https://doi.org/10.1063/1.355891" @default.
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