Matches in SemOpenAlex for { <https://semopenalex.org/work/W2016643276> ?p ?o ?g. }
- W2016643276 endingPage "2596" @default.
- W2016643276 startingPage "2589" @default.
- W2016643276 abstract "n-type silicon-doped epitaxial layers of gallium arsenide grown by molecular-beam epitaxy (MBE) or metal-organo chemical vapor deposition (MOCVD) have been investigated by measurements of the Hall effect and the strengths of the localized vibrational modes (LVM) of silicon impurities using both Fourier transform absorption spectroscopy and Raman scattering at an excitation energy of 3 eV close to the E1 band gap. Lines from Si(Ga) donors, Si(As) acceptors, Si(Ga)-Si(As) pairs, and Si-X, a complex of silicon with a native defect, were detected and correlated for the two techniques. The maximum carrier concentration [n] found for samples grown under standard conditions was 5.5×1018 cm−3. At higher doping levels Si-X becomes dominant and acts as an acceptor, so reducing [n]. An integrated absorption of 1 cm−2 in the Si(Ga) LVM line corresponds to 5.0±4×1016 atoms cm−3: a similar calibration applies to the Si(As) line, but for Si-X, an absorption of 1 cm−2 corresponds to only 2.7±1.0×1016 defects cm−3. Possible structures for Si-X are discussed but a definitive model cannot yet be proposed. MBE samples grown at 400 °C had values of [n] close to 1019 cm−3, and a negligible concentration of Si-X. On annealing, [n] decreased and Si-X defects were produced together with site switching of Si(Ga) to Si(As). These results are important to the understanding of the mechanism of silicon diffusion at low temperatures. The infrared absorption and Raman measurements are complementary. Absorption measurements made at a resolution of 0.1 cm−1 require layers greater than or equal to 1 μm in thickness doped to a level of 3×1017 cm−3 but require the prior elimination of free-carrier absorption. Raman measurements can be made on as-grown layers only 10 nm in thickness doped to a level of 2×1018 cm−3, but with a spectral resolution of only 5 cm−1." @default.
- W2016643276 created "2016-06-24" @default.
- W2016643276 creator A5003544828 @default.
- W2016643276 creator A5045054604 @default.
- W2016643276 creator A5057512010 @default.
- W2016643276 creator A5060914896 @default.
- W2016643276 creator A5071742479 @default.
- W2016643276 creator A5078408169 @default.
- W2016643276 creator A5083471210 @default.
- W2016643276 creator A5083632801 @default.
- W2016643276 date "1989-09-15" @default.
- W2016643276 modified "2023-10-09" @default.
- W2016643276 title "The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scattering" @default.
- W2016643276 cites W1964091015 @default.
- W2016643276 cites W1969787200 @default.
- W2016643276 cites W1977967023 @default.
- W2016643276 cites W1989471885 @default.
- W2016643276 cites W1992011463 @default.
- W2016643276 cites W1998198002 @default.
- W2016643276 cites W2000698730 @default.
- W2016643276 cites W2002039366 @default.
- W2016643276 cites W2005679078 @default.
- W2016643276 cites W2010520511 @default.
- W2016643276 cites W2017741582 @default.
- W2016643276 cites W2020128055 @default.
- W2016643276 cites W2024527691 @default.
- W2016643276 cites W2024646627 @default.
- W2016643276 cites W2032512083 @default.
- W2016643276 cites W2042716091 @default.
- W2016643276 cites W2049020534 @default.
- W2016643276 cites W2057737793 @default.
- W2016643276 cites W2060182995 @default.
- W2016643276 cites W2067132237 @default.
- W2016643276 cites W2070946179 @default.
- W2016643276 cites W2082414907 @default.
- W2016643276 cites W2084058218 @default.
- W2016643276 cites W2084342094 @default.
- W2016643276 cites W2094845011 @default.
- W2016643276 doi "https://doi.org/10.1063/1.344224" @default.
- W2016643276 hasPublicationYear "1989" @default.
- W2016643276 type Work @default.
- W2016643276 sameAs 2016643276 @default.
- W2016643276 citedByCount "116" @default.
- W2016643276 countsByYear W20166432762012 @default.
- W2016643276 countsByYear W20166432762013 @default.
- W2016643276 countsByYear W20166432762014 @default.
- W2016643276 countsByYear W20166432762015 @default.
- W2016643276 countsByYear W20166432762017 @default.
- W2016643276 countsByYear W20166432762020 @default.
- W2016643276 countsByYear W20166432762021 @default.
- W2016643276 crossrefType "journal-article" @default.
- W2016643276 hasAuthorship W2016643276A5003544828 @default.
- W2016643276 hasAuthorship W2016643276A5045054604 @default.
- W2016643276 hasAuthorship W2016643276A5057512010 @default.
- W2016643276 hasAuthorship W2016643276A5060914896 @default.
- W2016643276 hasAuthorship W2016643276A5071742479 @default.
- W2016643276 hasAuthorship W2016643276A5078408169 @default.
- W2016643276 hasAuthorship W2016643276A5083471210 @default.
- W2016643276 hasAuthorship W2016643276A5083632801 @default.
- W2016643276 hasConcept C110738630 @default.
- W2016643276 hasConcept C113196181 @default.
- W2016643276 hasConcept C119824511 @default.
- W2016643276 hasConcept C120665830 @default.
- W2016643276 hasConcept C121332964 @default.
- W2016643276 hasConcept C125287762 @default.
- W2016643276 hasConcept C153642686 @default.
- W2016643276 hasConcept C159985019 @default.
- W2016643276 hasConcept C169573571 @default.
- W2016643276 hasConcept C171250308 @default.
- W2016643276 hasConcept C175665537 @default.
- W2016643276 hasConcept C178790620 @default.
- W2016643276 hasConcept C185592680 @default.
- W2016643276 hasConcept C191897082 @default.
- W2016643276 hasConcept C192562407 @default.
- W2016643276 hasConcept C26873012 @default.
- W2016643276 hasConcept C2779227376 @default.
- W2016643276 hasConcept C2779892579 @default.
- W2016643276 hasConcept C3792809 @default.
- W2016643276 hasConcept C40003534 @default.
- W2016643276 hasConcept C43617362 @default.
- W2016643276 hasConcept C49040817 @default.
- W2016643276 hasConcept C510052550 @default.
- W2016643276 hasConcept C544956773 @default.
- W2016643276 hasConcept C550372918 @default.
- W2016643276 hasConcept C57410435 @default.
- W2016643276 hasConcept C57863236 @default.
- W2016643276 hasConcept C71987851 @default.
- W2016643276 hasConceptScore W2016643276C110738630 @default.
- W2016643276 hasConceptScore W2016643276C113196181 @default.
- W2016643276 hasConceptScore W2016643276C119824511 @default.
- W2016643276 hasConceptScore W2016643276C120665830 @default.
- W2016643276 hasConceptScore W2016643276C121332964 @default.
- W2016643276 hasConceptScore W2016643276C125287762 @default.
- W2016643276 hasConceptScore W2016643276C153642686 @default.
- W2016643276 hasConceptScore W2016643276C159985019 @default.
- W2016643276 hasConceptScore W2016643276C169573571 @default.
- W2016643276 hasConceptScore W2016643276C171250308 @default.
- W2016643276 hasConceptScore W2016643276C175665537 @default.