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- W2016673023 abstract "SnO2 thin films have been successfully deposited on α-Al2O3 (0 1 2) substrates by metalorganic chemical vapor deposition (MOCVD) in the temperature range 500–700 °C. The films were epitaxially grown in the tetragonal SnO2 phase and were (1 0 1) oriented. In-plane orientation relationship [0 1 0]SnO2||[1 0 0]Al2O3 and [1 0 1̄]SnO2||[1̄ 2̄ 1]Al2O3 was determined between the film and substrate. Photoluminescence (PL) spectra measured at room temperature revealed that the film grown at 700 °C showed an intense ultra-violet (UV) PL peak at 333 nm, which was a band-edge emission peak in SnO2 films. At a temperature of 13 K, a new broad PL band centered at about 480 nm was observed. The corresponding PL mechanisms are discussed in detail." @default.
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- W2016673023 date "2011-01-01" @default.
- W2016673023 modified "2023-10-13" @default.
- W2016673023 title "Structure and photoluminescence properties of epitaxial SnO2 films grown on α-Al2O3 (012) by MOCVD" @default.
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- W2016673023 doi "https://doi.org/10.1016/j.jlumin.2010.09.004" @default.
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