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• W2016735862 abstract "The method of isothermal discharge of MNOS-structures with the thickness of SiO2 of 80 to 100 A is proposed for investigating electron and hole transport in fields of 105 to 106 V/cm through Si3N4 films. The hole transport is investigated on structures with molybdenum “grains” deposited on the SiO2Si3N4 interface. It is shown that transport of both electrons and holes occurs according to the Poole-Frenkel effect.[Russian Text Ignored]." @default.
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• W2016735862 date "1978-09-16" @default.
• W2016735862 modified "2023-09-26" @default.
• W2016735862 title "Electron and hole conduction in silicon nitride at moderate electric fields" @default.
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• W2016735862 doi "https://doi.org/10.1002/pssa.2210490127" @default.
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