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• W2016738984 abstract "The role of nitrogen in improving the interface properties and the reliability of oxynitride/SiGe interfaces and the dielectric properties of oxynitride films has been studied using constraint theory. Ultrathin (&lt;3 nm) oxynitride films were grown using N2O followed by N2 annealing on strained Si0.82Ge0.18 layers. Silicon dioxide films grown on strained Si0.82Ge0.18 layers were also nitrided in N2O by rapid thermal processing. The nitrogen distribution in the oxynitride films was investigated by time-of-flight secondary ion mass spectrometry. The interface state density, charge trapping properties, and interface state generation with constant current and voltage stressing were studied. It is observed that dielectric films grown in N2O ambient and subsequently annealed in N2 have excellent electrical properties. A low stress-induced leakage current and a high time dependent dielectric breakdown are also observed in these films. Improvements in the electrical properties are shown to be due to the creation of a large number of strong Si–N bonds both in bulk and in the SiON–Si1−xGex interface region of the dielectric." @default.
• W2016738984 created "2016-06-24" @default.
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• W2016738984 date "2003-03-01" @default.
• W2016738984 modified "2023-10-18" @default.
• W2016738984 title "Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates" @default.
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• W2016738984 doi "https://doi.org/10.1063/1.1540224" @default.
• W2016738984 hasPublicationYear "2003" @default.
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