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- W2016754966 abstract "Thin films of Yb2O3 were deposited by electron beam evaporation. Al/Yb2O3/Al capacitors are characterized by a low dispersion of capacitance (ΔC/C normalized at 1 kHz varying from +16.5% to -1%) and a dielectric loss factor tan δ in the range 0.06–0.0045 for frequencies from 0.1 Hz to 3 MHz at room temperature. The increase in tan δ in the r.f. region was explained as due to the electrode resistance of the capacitors. Also the a.c. conductivity σ was investigated as a function of temperature between 130 and 600 K. The conductivity and the imaginary part ε″r of the complex permittivity obeyed the universal law of dielectric response: σ(ω) ∝ ωn and ε″r(ω) ∝ ωn − 1 with n = 0.77–0.79. The a.c. conductivity of the films was described by a hopping mechanism. The density of states at the Fermi level was evaluated." @default.
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- W2016754966 title "Dielectric behaviour of Yb2O3 thin film capacitors" @default.
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- W2016754966 doi "https://doi.org/10.1016/0040-6090(84)90292-x" @default.
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