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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2016787428> ?p ?o ?g. }

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• W2016787428 startingPage "1414" @default.
• W2016787428 abstract "Since transition-metal impurity levels are found to be aligned with respect to each other within a group of isovalent semiconductor compounds, as if a common reference level existed for them, we propose to use this fictitious level for the band alignment in semiconductor heterojunctions. This rule leads to a valence-band discontinuity in ${mathrm{Ga}}_{1ensuremath{-}x}{mathrm{Al}}_{x}mathrm{As}/mathrm{GaAs}$ heterojunction of $ensuremath{Delta}{E}_{v}=(0.34ifmmodepmelsetextpmfi{}0.05)xensuremath{Delta}{E}_{g}$ (AlAs/GaAs) in agreement with the most recent measurements. Predictions of several III-V on III-V and II-VI on II-VI heterojunction band-edge discontinuities are also given." @default.
• W2016787428 created "2016-06-24" @default.
• W2016787428 creator A5056421754 @default.
• W2016787428 creator A5056837434 @default.
• W2016787428 date "1985-09-23" @default.
• W2016787428 modified "2023-10-14" @default.
• W2016787428 title "Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions" @default.
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• W2016787428 doi "https://doi.org/10.1103/physrevlett.55.1414" @default.
• W2016787428 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/10031813" @default.
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