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• W2016804957 abstract "RF sputtered Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> thin film is deposited on the cavity surface of LD (laser diode) by N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma pretreatment. Firstly optimize the preparation process of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> film, and test the chemical ratio, reflectivity and optical absorption of the optimized Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> film by EDX, spectrophotometer and surface thermal lens technology respectively, which verify the feasibility of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> used for facet coating film in LD process; then optimize the N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma cleaning process, and use PL to find out that sputtered Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> passivation film by N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma pretreatment can increase the GaAs surface photoluminescence efficiency by 119%. Finally, a 10 nm thick Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>y</sub> passivation film is coated on cavity surface of LD with optimized N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> plasma pretreatment, which leads to a higher reliability than the traditional LD." @default.
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• W2016804957 date "2013-07-01" @default.
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• W2016804957 title "Facet Passivation of GaAs Based LDs by N2 Plasma Pretreatment and RF Sputtered AlxNy Film Coating" @default.
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• W2016804957 doi "https://doi.org/10.1109/jlt.2013.2265157" @default.
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