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• W2016804973 abstract "Abstract Looking for simple engineering solutions, we built a three target dc sputtering system of 45 cm diameter, which performance was studied for Ta and Si deposition, for two shielding geometries and different pressures, target-to-substrate distances, argon fluxes and power densities. The thickness uniformity of the deposited films, without rotating the substrates, was better than ±3%, for diameters of 50 mm, with the single shield, 70 mtorr and 25 mm distance. With the supplementary ring, designed to avoid the target rim bombardment, the uniformity fell to ±10%, evidencing the target rim compensation of the thickness along the substrates. At higher pressures and distances this compensation decreased, this behaviour being attributed to a greater randomization of the particle trajectories. Typical deposition rates were 280 A min−1 at 1.7 W cm−2 for Ta and 110 A min−1 at 1.0 W cm−2 for Si. The Ta resistivity was between 1.8 and 10.1 mμ cm and its density was 12.4±0.3 g cm−3, which proved to be a low density form, with bcc structure strongly oriented in (110) direction. The Si films were amorphous with an Ar content up to 3.5% and 7.5% of 0." @default.
• W2016804973 created "2016-06-24" @default.
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• W2016804973 date "1990-01-01" @default.
• W2016804973 modified "2023-09-30" @default.
• W2016804973 title "Considerations on the design of a dc sputtering system concerning its application to Ta and Si deposition" @default.
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• W2016804973 doi "https://doi.org/10.1016/0042-207x(90)93966-m" @default.
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