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- W2016809084 abstract "The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO2 thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO2 atmosphere. The influence of the atomic steps at the vicinal SiO2/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO2 pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth." @default.
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- W2016809084 date "2014-04-01" @default.
- W2016809084 modified "2023-10-02" @default.
- W2016809084 title "3C-SiC nanocrystal growth on 10° miscut Si(001) surface" @default.
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- W2016809084 doi "https://doi.org/10.1016/j.tsf.2014.01.070" @default.
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