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- W2016809666 abstract "The use of the binary and quaternary systems InP and In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}P{sub y} for the fabrication of long wavelengths (i.e., 1.3-1.6{mu}m) LED's and lasers is a well-established approach. Our work is focused on the quaternay (Q) materials, with the major emphasis being on the surface chemistry of epitaxially grown Q-layers, lattice matched to InP and photoluminescing at about 1.3 {mu}m. In this paper the authors report on a surface stoichiometry shift that has been observed on annealing Q-layers up to about 600{degrees}C in a vacuum ({approximately}10{sup {minus}9} Torr)." @default.
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- W2016809666 date "1990-04-01" @default.
- W2016809666 modified "2023-10-18" @default.
- W2016809666 title "Vacuum Annealing Effects on the Surface Stoichiometry of InGaAsP" @default.
- W2016809666 doi "https://doi.org/10.1149/1.2086659" @default.
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