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• W2016884976 abstract "This article reports an investigation of the negative-bias temperature instability in metal-oxide-silicon (MOS) systems with gate oxide thickness (Tox) in the range of 4.2–30 nm. The bias temperature aging was performed on p-type samples with applied negative oxide fields (1.6–5.0 MV/cm) over a temperature range of 150–290 °C. The maximum aging time was 5000 h. The interface-trap distribution was evaluated by the conductance technique. This time-consuming method yields reliable results even in ultrathin oxides, if appropriate corrections are made. The interface-trap generation and the concurrent fixed oxide charge can be expressed by simple empirical expressions. Their characteristic features are the inverse proportionality to oxide thickness (Tox) for the generated interface-trap density (Nit) and no thickness dependence for the fixed charge generation. A general phenomenological model is proposed to explain these empirical expressions in terms of the diffusion-reaction chemistry between hydrogenated trivalent silicon and the diffusing species. It is developed for the uncharged (neutral) and positively charged cases of diffusing species. Experimental results support the neutral-species (molecular hydrogen) model and the observed T−1ox dependence of Nit generation implies that the negative-bias temperature instability becomes more severe for ultrathin gate oxide MOS devices." @default.
• W2016884976 created "2016-06-24" @default.
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• W2016884976 date "1995-02-01" @default.
• W2016884976 modified "2023-10-16" @default.
• W2016884976 title "Interface-trap generation at ultrathin SiO2 (4–6 nm)-Si interfaces during negative-bias temperature aging" @default.
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• W2016884976 doi "https://doi.org/10.1063/1.358977" @default.
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