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• W2016903432 abstract "The design and test of the first undervoltage lock-out circuit implemented in a low-voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data show the circuit to be functional over a temperature range from -55°C to 300°C. The design of the circuit and test results is presented." @default.
• W2016903432 created "2016-06-24" @default.
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• W2016903432 date "2014-09-01" @default.
• W2016903432 modified "2023-09-24" @default.
• W2016903432 title "A UVLO Circuit in SiC Compatible With Power MOSFET Integration" @default.
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• W2016903432 doi "https://doi.org/10.1109/jestpe.2014.2313119" @default.
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