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• W2016906942 abstract "The solid phase hetero-epitaxy of amorphous SiGe on a Si(100) substrate has been investigated. The initial SiGe was deposited by ion beam sputtering at room temperature from a composite target of Si and Ge wafers. The solid phase epitaxial SiGe layer was formed through a boron diffusion, thermal annealing and oxidation process, respectively. The boron diffusion was carried out at 970 °C and then 1065 °C for redistribution, thermal annealing was carried out at 1000 °C in a N2 ambient, and oxidation at 90 °C in steam, dry O2 and steam ambient subsequently. Auger electron spectroscopy, X-ray diffraction, scanning electron microscopy, Rutherford backscattering spectroscopy/channelling, cross-sectional transmission electron microscopy, and Raman Spectroscopy were used to characterize the SiGe film. The experimental results indicate that through a boron diffusion, Ge atoms diffuse considerably generating a SiGe layer with a lower Ge concentration than that of the as-deposited film, while the thermal annealing makes the amorphous SiGe layer crystallize, for the oxidation of the a-SiGe/Si structure, a newly formed SiGe/Si heterostructure with a higher Ge concentration than that or the as-deposited film has been found due to the selective oxidation of Si at the applied temperature." @default.
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• W2016906942 date "1997-01-01" @default.
• W2016906942 modified "2023-10-16" @default.
• W2016906942 title "Investigation on solid phase epitaxy of deposited SiGe film on a Si substrate" @default.
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• W2016906942 doi "https://doi.org/10.1016/s0040-6090(96)09112-2" @default.
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