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- W2016985605 abstract "We have successfully fabricated MBE-grown GaAs field effect transistors employing a strained MQW buffer layer. Quarter micron gate device showed transconductance as high as 1.460mS/mm (900mS/mm extrinsic) at a current density of 620mA/mm. The measured fc was 75GHz. These high transconductances are, to the authors knowledge, the best reported for GaAs MESFETs." @default.
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- W2016985605 date "1990-01-01" @default.
- W2016985605 modified "2023-09-23" @default.
- W2016985605 title "Ultra high transconductance 0.25 μm gate MESFET with strained InGaAs buffer layer" @default.
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- W2016985605 doi "https://doi.org/10.1049/el:19900109" @default.
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