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- W2016991644 abstract "We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium–tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 °C for 3200 min, the resistivity of the ITO film increases from 1.3 × 10−4 to 7.0 × 10−4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10−3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 °C, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors." @default.
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- W2016991644 date "2011-12-01" @default.
- W2016991644 modified "2023-10-18" @default.
- W2016991644 title "Transparent conducting oxide electrodes for novel metal oxide gas sensors" @default.
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- W2016991644 doi "https://doi.org/10.1016/j.snb.2011.07.061" @default.
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